PHOTOELECTRIC CONVERSION APPARATUS

• Main Authors: MORIMOTO KAZUHIRO, SEKINE HIROSHI, MAEHASHI YU, IWATA JUNJI
• Format: Patent
• Language: English; Japanese
• Published: 16.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To reduce crosstalk induced by photons due to avalanche light emission reflected at an Si backside of moth-eye structure, as stray light.SOLUTION: An photoelectric conversion apparatus comprises a plurality of avalanche diodes disposed in a semiconductor layer having a first surface and a second surface facing the first surface. The plurality of avalanche diodes each includes a first semiconductor region of first conductivity type located at a first depth, and a second semiconductor region of second conductivity type located at a second depth greater than the first depth with respect to the second surface. The semiconductor layer includes a plurality of concavity and convexity structures disposed in the first surface, and the plurality of concavity and convexity structures each has an effective period less than hc/Ea, where h is Planck's constant [J*s], c is speed of light [m/s], and Ea is a band gap of a substrate [J].SELECTED DRAWING: Figure 6 【課題】 アバランシェ発光による光子がモスアイ構造のＳｉ裏面で反射され、迷光としてクロストークを誘起する。【解決手段】 第１の面と、前記第１の面に対向する第２の面と、を有する半導体層に配された複数のアバランシェダイオードを有する光電変換装置であって、前記複数のアバランシェダイオードのそれぞれは、第１の深さに配された第１の導電型の第１の半導体領域と、前記第１の深さよりも前記第２の面に対して深い第２の深さに配された第２の導電型の第２の半導体領域と、を有し、前記半導体層は、前記第１の面に設けられた複数の凹凸構造を備え、前記複数の凹凸構造の実効周期はｈｃ／Ｅａｈ：プランク定数［Ｊ・ｓ］、ｃ：光速［ｍ／ｓ］、Ｅａ：基板のバンドギャップ［Ｊ］よりも小さいことを特徴とする光電変換装置。【選択図】 図６