RESISTANCE CHANGE TYPE NON-VOLATILE MEMORY

• Main Authors: TAKASHIMA DAIZABURO, CHIBA TOMOKI, SHIGA HIDEHIRO
• Format: Patent
• Language: English; Japanese
• Published: 13.03.2023
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

To provide a resistance change type non-volatile memory capable of maintaining a peak temperature regardless of positions of word lines of a selected memory cell to eliminate the dependency of the selected memory cell.SOLUTION: A resistance change type non-volatile memory according to the embodiment includes a first memory cell and a second memory cell. The first memory cell includes: a resistance change layer extending in a first direction orthogonal to a semiconductor substrate; a semiconductor layer extending in the first direction and in contact with the resistance change layer; a first insulator layer extending in the first direction and in contact with the semiconductor layer; and a first potential applying electrode extending in a second direction perpendicular to the first direction and in contact with the first insulator layer. The second memory cell includes a second potential applying electrode arranged on an upper layer side of the first potential applying electrode, extending in the second direction, and in contact with the insulator layer. When an operation of writing to the first memory cell is performed, a first voltage is applied to the second potential applying electrode, and when an operation of writing to the second memory cell is performed, a second voltage is applied to the first potential applying electrode. The first voltage is greater than the second voltage.SELECTED DRAWING: Figure 19 【課題】選択メモリセルのワード線の位置に依らず、ピーク温度を保持することができ、選択メモリセル依存性を解消する。【解決手段】実施の形態に係る抵抗変化型不揮発性メモリは、第１のメモリセルと、第２のメモリセルとを備える。第１のメモリセルは、半導体基板に直交する第１方向に延伸する抵抗変化層と、第１方向に延伸し、抵抗変化層に接する半導体層と、第１方向に延伸し、半導体層に接する第１絶縁体層と、第１方向に直交する第２方向に延伸し、第１絶縁体層に接する第１電位印加電極とを備える。第２のメモリセルは、第１電位印加電極の上層側に配置され、第２方向に延伸し、絶縁体層に接する第２電位印加電極、を備える。第１のメモリセルに対して書き込み動作をするときに、第２電位印加電極に第１電圧を印加し、第２のメモリセルに対して書き込み動作をするときに、第１電位印加電極に第２電圧を印加する。第１電圧は、第２電圧よりも大きい。【選択図】図１９