MANUFACTURING METHOD OF METAL OXIDE FILM, METAL OXIDE FILM MANUFACTURED USING THE SAME, AND ELECTRONIC DEVICE

• Main Authors: NAKADA MITSURU, MIYAKAWA MIKIJI, TSUJI HIROSHI
• Format: Patent
• Language: English; Japanese
• Published: 09.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a manufacturing method of a metal oxide film capable of obtaining high carrier mobility capable of responding to driving of a high-definition display without requiring a vacuum deposition method or a complicated process, the metal oxide film, and an electronic device.SOLUTION: A manufacturing method successively implements: a precursor solution coating step (a) of coating a coated body with a generated precursor solution after implementing a precursor solution generating step of generating the precursor solution of a metal oxide with a mol concentration of 0.01 M to 0.20 M by dissolving inorganic acid salt of indium in an aqueous solvent; a soft annealing step (b) of applying smooth annealing to the precursor solution of the metal oxide on the coated body; a metal oxide film generating step (c) of generating a metal oxide film of which the film thickness ranges from 0.5 nm to 5.0 nm and the film density ranges from 6.0 g/cm to 7.1 g/cm3 by radiating and oxidizing energy beams; and an etching step (d) of patterning the metal oxide film.SELECTED DRAWING: Figure 1 【課題】真空成膜法や複雑なプロセスを必要とせず、高精細なディスプレイの駆動にも対応し得る高いキャリア移動度を得ることのできる、金属酸化物膜の製造方法、金属酸化物膜および電子デバイスを提供する。【解決手段】インジウムの無機酸塩を、水溶媒中に溶解して、0.01M～0.20Mのモル濃度の金属酸化物の前駆体溶液を生成する前駆体溶液生成工程を行った後、生成された前駆体溶液を被塗布体上に塗布する前駆体溶液塗布工程（ａ）と、被塗布体上の金属酸化物の前駆体溶液に緩やかなアニーリングを施すソフトアニーリング工程（ｂ）と、エネルギー線を照射し、酸化させて、膜厚0.5nm～5.0nm／膜密度6.0g/cm～7.1g/cm3の金属酸化物膜を生成する金属酸化物膜生成工程（ｃ）と、この金属酸化物膜をパターニングするエッチング工程（ｄ）をこの順に行う。【選択図】図１