METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

• Main Authors: MIYAGI MASAHIRO, HORI MASARU, ODA OSAMU, KODAMA KAZUKI, INABA MAKI
• Format: Patent
• Language: English; Japanese
• Published: 09.02.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technique capable of manufacturing a group III nitride semiconductor with a small carbon content and good surface morphology.SOLUTION: A method for manufacturing a group III nitride semiconductor includes carrying-in step S1, decompression step S2, heating step S3, first deposition step S5, and second deposition step S6. The carrying-in step S1 carries a substrate into a chamber. The decompression step S2 decreases a pressure in the chamber. The heating step S3 heats the substrate. The first deposition step S5 supplies an organic metal gas containing a group III element into the substrate in the chamber, plasma-excites a first gas containing a hydrogen gas and a nitrogen gas, and supplies the first gas to the substrate in the chamber. The second deposition step S6 supplies the organic metal gas containing the group III element into the substrate in the chamber, plasma-excites a second gas not containing hydrogen but containing a nitrogen gas, and supplies the second gas to the substrate in the chamber.SELECTED DRAWING: Figure 3 【課題】炭素の含有量が小さく、かつ、表面モフォロジーが良好であるＩＩＩ族窒化物半導体を製造できる技術を提供する。【解決手段】ＩＩＩ族窒化物半導体の製造方法は搬入工程Ｓ１と減圧工程Ｓ２と加熱工程Ｓ３と第１成膜工程Ｓ５と第２成膜工程Ｓ６とを備える。搬入工程Ｓ１では、チャンバ内に基板を搬入する。減圧工程Ｓ２では、チャンバ内の圧力を低下させる。加熱工程Ｓ３では、基板を加熱する。第１成膜工程Ｓ５では、ＩＩＩ族元素を含む有機金属ガスをチャンバ内の基板に供給し、水素ガスおよび窒素ガスを含む第１ガスをプラズマ励起してチャンバ内の基板に供給する。第２成膜工程Ｓ６では、当該ＩＩＩ族元素を含む有機金属ガスをチャンバ内の基板に供給し、水素を含まずに窒素ガスを含む第２ガスをプラズマ励起してチャンバ内の基板に供給する。【選択図】図３