PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

• Main Author: TAMAMUSHI GEN
• Format: Patent
• Language: English; Japanese
• Published: 10.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a technique of controlling the electric potential of a plasma.SOLUTION: A plasma processing method contains: a step of arranging a substrate to a substrate support part; a step of supplying a processing gas for processing the substrate into a chamber; a step of generating a plasma of the processing gas in the chamber by supplying high frequency waves to an upper electrode or the substrate support part; a first application step of periodically applying a first bias voltage to the substrate support part in a first period in a period where the high frequency waves are supplied; and a second application step of periodically applying a second bias voltage to the upper electrode in a second period that is an integral multiple of the first period in a period where the high frequency waves are supplied.SELECTED DRAWING: Figure 3 【課題】プラズマの電位を制御する技術を提供する。【解決手段】プラズマ処理方法であって、基板支持部に基板を配置する工程と、基板を処理するための処理ガスをチャンバ内に供給する工程と、上部電極又は基板支持部に高周波を供給してチャンバ内に処理ガスのプラズマを生成する工程と、高周波が供給されている期間において、基板支持部に第１のバイアス電圧を第１の周期で周期的に印加する第１の印加工程と、高周波が供給されている期間において、上部電極に第２のバイアス電圧を第１の周期の整数倍である第２の周期で周期的に印加する第２の印加工程とを含む。【選択図】 図３