SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: NISHIKAWA DAICHI, NOMURA TATSUYA, IKENO DAISUKE, KAJITA AKIHIRO
• Format: Patent
• Language: English; Japanese
• Published: 06.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device comprising a wire of low electric resistance.SOLUTION: A semiconductor device comprises: a first conductive layer which extends in a first direction, includes a first face, a second face facing the first face in a second direction crossing the first direction, a third face and a fourth face facing the third face in a third direction crossing the first direction and the second direction and contains a first element which is at least one element selected from the group consisting of tungsten (W) and molybdenum (Mo); a first region which is provided at the side of the first face of the first conductive layer, contains a second element which is at least one element selected from the group consisting of tungsten (W) and molybdenum (Mo) and a third element which is at least one element selected from the group consisting of sulfur (S), selenium (Se) and tellurium (Te) and contains a first crystal; and a second region which is provided at the side of the second face of the first conductive layer, contains the second element and the third element and contains a second crystal.SELECTED DRAWING: Figure 3 【課題】電気抵抗の低い配線を備える半導体装置を提供する。【解決手段】実施形態の半導体装置は、第１の方向に延び、第１の面と、第１の方向と交差する第２の方向に第１の面と対向する第２の面と、第３の面と、第１の方向及び第２の方向と交差する第３の方向に第３の面と対向する第４の面とを有し、タングステン（Ｗ）及びモリブデン（Ｍｏ）からなる群から選ばれる少なくとも一つの元素である第１の元素を含む第１の導電層と、第１の導電層の第１の面の側に設けられ、タングステン（Ｗ）及びモリブデン（Ｍｏ）からなる群から選ばれる少なくとも一つの元素である第２の元素と、硫黄（Ｓ）、セレン（Ｓｅ）、及びテルル（Ｔｅ）からなる群から選ばれる少なくとも一つの元素である第３の元素とを含み、第１の結晶を含む第１の領域と、第１の導電層の第２の面の側に設けられ、第２の元素と第３の元素とを含み、第２の結晶を含む第２の領域と、を備える。【選択図】図３