IMAGE SENSOR PACKAGE AND ELECTRONIC EQUIPMENT

• Main Authors: MIYANAGA TAKASHI, HAMAGUCHI SHINGO, MASUDA YOSHIAKI, ASAZUMA TOMOHIKO, TODA ATSUSHI, OKITA AKIFUMI, NOUDO SHINICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 20.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To capture better quality images.SOLUTION: A support portion supporting a cover glass protecting a light-receiving surface of a semiconductor substrate on which a photodiode is provided is provided along the outer periphery of the semiconductor substrate, and an antireflection layer is provided between the support portion and the semiconductor substrate at least in the area where the support portion is provided. The antireflection layer is provided over the entire light-receiving surface of the semiconductor substrate, and the support portion is stacked against the antireflection layer. This technology is applicable, for example, to CMOS image sensors.SELECTED DRAWING: Figure 1 【課題】より良好な画質の画像を撮像する。【解決手段】フォトダイオードが設けられる半導体基板の受光面を保護するカバーガラスを支持する支持部が、半導体基板の外周に沿って設けられ、少なくとも支持部が設けられる領域において、支持部と半導体基板との間に反射防止層が設けられる。反射防止層は、半導体基板の受光面の全面に亘って設けられ、その反射防止層に対して支持部が積層される。本技術は、例えば、CMOSイメージセンサに適用できる。【選択図】図１