SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

To suppress roughness on the surface of an etched silicon film.SOLUTION: A first step for supplying processing gas containing halogen-containing gas and basic gas to a substrate in which a silicon film is formed on the surface and the substrate itself is set to a first temperature and generating a r...

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Bibliographic Details
Main Authors TAKAHASHI NOBUHIRO, MATSUNAGA JUNICHIRO, HORIKAWA KIYOTAKA
Format Patent
LanguageEnglish
Japanese
Published 13.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To suppress roughness on the surface of an etched silicon film.SOLUTION: A first step for supplying processing gas containing halogen-containing gas and basic gas to a substrate in which a silicon film is formed on the surface and the substrate itself is set to a first temperature and generating a reaction product by altering the surface of the silicon film and a second step for removing the reaction product by setting the substrate to the second temperature after the first step.SELECTED DRAWING: Figure 1C 【課題】エッチング後のシリコン膜の表面のラフネスを抑制すること。【解決手段】表面にシリコン膜が形成されて第１の温度とされた基板に、ハロゲン含有ガス及び塩基性ガスを含む処理ガスを供給し、前記シリコン膜の表面を変質させて反応生成物を生成させる第１の工程と、前記第１の工程の後に前記基板を第２の温度として前記反応生成物を除去する第２の工程と、を実施する。【選択図】図１Ｃ
Bibliography:Application Number: JP20220052187