LASER PROCESSING DEVICE AND LASER PROCESSING METHOD

To improve laser processing precision in a laser processing device that forms multiple rows of modification regions for division in a semiconductor substrate.SOLUTION: A laser processing device comprises a laser irradiation unit 3 and a control part 8. The control part 8 is configured to execute: fi...

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Bibliographic Details
Main Authors OGIWARA TAKAFUMI, JOAN HAYATE
Format Patent
LanguageEnglish
Japanese
Published 08.12.2022
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Summary:To improve laser processing precision in a laser processing device that forms multiple rows of modification regions for division in a semiconductor substrate.SOLUTION: A laser processing device comprises a laser irradiation unit 3 and a control part 8. The control part 8 is configured to execute: first control for controlling the laser irradiation unit 3 so that modification regions for division are formed along each line extending in an X direction, and a crack 14 extends in a direction of a surface 21a from the modification regions 12a, b; second control for controlling the laser irradiation unit 3 so that after the first control, the modification regions for division are formed along each of a plurality of lines in a Y direction, and the crack 14 extends in the direction of the surface 21a from the modification regions; and third control for controlling the laser irradiation unit 3 so that before the second control, the crack 14 extending from a plurality of modification regions for warpage suppression reaches a rear face 21b and is formed discontinuously to the crack 14 extending from the modification regions for division.SELECTED DRAWING: Figure 4 【課題】半導体基板の内部に複数列の分割用の改質領域を形成するレーザ加工装置において、レーザ加工精度を向上させること。【解決手段】レーザ加工装置は、レーザ照射ユニット3と制御部8とを備え、制御部8は、X方向に延びるラインのそれぞれに沿って、分割用の改質領域が形成され該改質領域12a,bから表面21a方向に亀裂14が延びるようにレーザ照射ユニット3を制御する第1制御と、第1制御後において、Y方向に複数のラインのそれぞれに沿って、分割用の改質領域が形成され改質領域から表面21a方向に亀裂14が延びるようにレーザ照射ユニット3を制御する第2制御と、第2制御前において、反り抑制用の複数の改質領域から延びる亀裂14が、裏面21bに到達すると共に分割用の改質領域から延びる亀裂14に連続せずに形成されるように、レーザ照射ユニット3を制御する第3制御と、を実行するように構成されている。【選択図】図4
Bibliography:Application Number: JP20210090392