INSPECTION METHOD OF SILICON CARBIDE EPITAXIAL SUBSTRATE, MANUFACTURING METHOD OF SILICON CARBIDE EPITAXIAL SUBSTRATE AND SUBSTRATE SET

• Main Authors: ITO HIRONORI, HORI TSUTOMU
• Format: Patent
• Language: English; Japanese
• Published: 01.12.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To precisely detect a silicon carbide epitaxial substrate having a micro pipe by a simple method.SOLUTION: An inspection method of a silicon carbide epitaxial substrate has a following step. The silicon carbide epitaxial substrate is vacuum chucked by a vacuum chuck. Based on a vacuum degree of the vacuum chuck, it is determined whether the silicon carbide epitaxial substrate has a micro pipe.SELECTED DRAWING: Figure 8 【課題】簡便な方法でマイクロパイプを有する炭化珪素エピタキシャル基板を精度良く検出する。【解決手段】炭化珪素エピタキシャル基板の検査方法は以下の工程を有している。炭化珪素エピタキシャル基板が真空チャックに真空吸着される。真空チャックの真空度に基づいて、炭化珪素エピタキシャル基板がマイクロパイプを有するかどうかが判定される。【選択図】図８