ULTRA HIGH SPEED IMAGE SENSOR

• Main Authors: WATABE HEIJI, MATSUNAGA MASAYUKI, ETO KOJI, SHIMURA TAKAYOSHI, MUTO HIDEKI
• Format: Patent
• Language: English; Japanese
• Published: 25.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To provide an image sensor and a photographing device capable of controlling the delay in the horizontal movement of a signal electron in the pixel of the image sensor to make the shooting speed ultra-high, and taking 10 to 40 consecutive images at a shooting speed equivalent to 100 billion images/second, or 100 images continuously at a shooting speed equivalent to 1 billion images/second.SOLUTION: In a sensor chip 136, each pixel is obtained by laminating an electrically insulating layer 143 parallel to a C plane parallel to a plane on which pixels are arranged, a circuit diffusion layer 141 which is a semiconductor layer, and a photoelectric conversion layer 140 which is a layer that generates charges by electromagnetic waves or charged particles in an A direction perpendicular to the plane on which the pixels are arranged from the insulating layer 143, and an electrode layer 144 in which L (L≥1) electrodes 149 are arranged in a B direction opposite to the A direction, and a surface on the photoelectric conversion layer side of adjacent surfaces of the circuit diffusion layer and the photoelectric conversion layer is substantially smaller than a surface on the circuit diffusion layer side, and one of the electrodes 149 includes two or more contacts that electrically join wires carrying different voltages.SELECTED DRAWING: Figure 12 【課題】イメージセンサの画素内での信号電子の水平運動の遅滞を制御して撮影速度を超高速化し、１０００億枚／秒相当の撮影速度で連続１０枚から４０枚、１０億枚／秒相当の撮影速度で連続数１００枚撮影できるイメージセンサ及び撮影装置を提供する。【解決手段】センサチップ１３６において、各画素は、画素が配列された平面と平行なＣ面に平行な電気的な絶縁層１４３と、絶縁層１４３から画素が配列された平面と直行するＡ方向に半導体層である回路拡散層１４１及び電磁波若しくは荷電粒子により電荷を生成する層である光電変換層１４０と、Ａ方向の逆方向のＢ方向に、Ｌ個（Ｌ≧１）の電極１４９を配置した電極層１４４とを、積層して成り、回路拡散層と光電変換層の近接する面の光電変換層側の面が、回路拡散層側の面より実質的に小さく、電極１４９の一つが、異なる電圧を送付する配線と電気的に接合する２個以上のコンタクトを備える。【選択図】図１２