SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AS WELL AS ELECTRONIC EQUIPMENT

• Main Authors: FUJII NOBUTOSHI, OMORI HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 24.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To enable the suppression of uneven reflection of incident light.SOLUTION: A solid state imaging device has an image sensor chip having a semiconductor substrate and a device chip bonded to a wiring layer on the opposite side of the semiconductor substrate from the light-entering side. The device chip is located in the pixel area of the image sensor chip, and the wiring layer of the image sensor chip has a dummy metal wiring in the area of the pixel area where the device chip is not located. This technology can be applied, for example, to a solid-state imaging device in which an image sensor chip and a device chip are bonded together.SELECTED DRAWING: Figure 1 【課題】入射光の反射ムラを抑制できるようにする。【解決手段】固体撮像装置は、半導体基板を有する撮像素子チップと、半導体基板の光入射面側とは反対側の配線層に接合されたデバイスチップとを備え、デバイスチップは、撮像素子チップの画素領域に配置されており、撮像素子チップの配線層は、画素領域のデバイスチップが配置されていない領域にダミー金属配線を備える。本技術は、例えば、撮像素子チップとデバイスチップとを接合した固体撮像装置等に適用できる。【選択図】図１