BLACK RESIST COMPOSITION AND METHOD FOR FORMING BLACK PATTERN BY NEAR INFRARED PHOTOLITHOGRAPHY
To propose a novel technique relating to photolithography for forming a black pattern such as a black matrix and to provide a black resist composition suitable for this process, having an excellent light blocking effect.SOLUTION: When forming a black pattern by photolithography, ultraviolet radiatio...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
22.11.2022
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Subjects | |
Online Access | Get full text |
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Summary: | To propose a novel technique relating to photolithography for forming a black pattern such as a black matrix and to provide a black resist composition suitable for this process, having an excellent light blocking effect.SOLUTION: When forming a black pattern by photolithography, ultraviolet radiation is conventionally used as exposure light. In contrast to this conventional method, the present invention is a novel photolithography process of a black pattern, which applies near infrared radiation. And a black resist composition suitable for this process comprises as main components: a black pigment (A) which transmits near infrared radiation; a sensitizing dye (B) having an absorption in a near infrared region; a radical polymerization initiator or an acid generator (C); and a binder resin (D). As the black pigment (A), preferably used are a lactam-based pigment, a perylene-based pigment, and an azomethine-based pigment. Together with this black pigment, a cyanine dye, a squarylium dye, or a phthalocyanine dye is included as a suitable sensitizing dye.SELECTED DRAWING: None
【課題】ブラックマトリクス等の黒色パターンを形成するためのフォトリソグラフィ法に関して新たな手法を提案すると共に、このプロセスに好適な遮光性に優れた黒色レジスト組成物を提供する。【解決手段】黒色パターンをフォトリソグラフィ法により形成する際、従来は露光光として紫外線を適用している。本発明は、前記従来法に対して近赤外線を適用する新規な黒色パターンのフォトリソグラフィプロセスである。そして、この方法に好適な黒色レジスト組成物として、近赤外線を透過する黒色顔料(A)、近赤外領域に吸収を有する増感色素(B)、ラジカル重合開始剤又は酸発生剤(C)、バインダー樹脂(D)を必須成分とする。黒色顔料(A)は、ラクタム系顔料、ぺリレン系顔料、アゾメチン系顔料が好ましく使用され、この黒色顔料と共に好適な増感色素として、シアニン色素、スクアリウム色素、フタロシアニン色素が含有される。【選択図】なし |
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Bibliography: | Application Number: JP20210079441 |