POLISHING COMPOSITION, POLISHING METHOD AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD

• Main Authors: YOSHIZAKI YUKINOBU, IKAWA HIROFUMI, MAE RYOTA, TADA MAKI, NAGANO TAKAHITO
• Format: Patent
• Language: English; Japanese
• Published: 13.10.2022
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

To provide means for suppressing part of a polishing target from being left unpolished and the occurrence of dishing in polishing the target including polycrystalline silicon and silicon nitride.SOLUTION: A polishing composition comprises: abrasive grains; ammonia; and at least one potassium compound selected from a group consisting of potassium hydroxide and a potassium salt. In the polishing composition, a content of the ammonia is 0.002 mass% or more and 0.5 mass% or less to a total mass of the polishing composition, and a content of the potassium compound is 0.004 mass% or more and 0.5 mass% or less to the total mass of the polishing composition.SELECTED DRAWING: None 【課題】ポリシリコンおよび窒化ケイ素を含む研磨対象物の研磨において、研磨残りおよびディッシングの両方を抑制できる手段を提供する。【解決手段】砥粒と、アンモニアと、水酸化カリウムおよびカリウム塩からなる群から選択される少なくとも１種のカリウム化合物とを含む研磨用組成物であって、前記アンモニアの含有量は前記研磨用組成物の総質量に対して０．００２質量％以上０．５質量％以下であり、前記カリウム化合物の含有量は前記研磨用組成物の総質量に対して０．００４質量％以上０．５質量％以下である、研磨用組成物。【選択図】なし