SILICON OXIDE FILM, MATERIAL FOR GAS BARRIER FILM AND METHOD OF MANUFACTURING SILICON OXIDE FILM

• Main Authors: TANAKA RYOJI, SUGIMOTO SHUN, FUKAWA MARINA
• Format: Patent
• Language: English; Japanese
• Published: 12.10.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; PERFORMING OPERATIONS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

To provide a silicon oxide film which can be formed in a short time and has high gas barrier performance showing a water vapor permeability (WVTR) of at least 9.0×10-3 g/m2 day order even with a film thickness of 500 nm or less and a high film deposition rate, a material for gas barrier films and a method of manufacturing a silicon oxide film using the material for gas barrier films.SOLUTION: There is provided a silicon oxide film satisfying requirements (1) to (3). The silicon oxide film has (1) a water vapor permeability (WVTR) of 9.0×10-3 g/m2 day or less with a film thickness of 500 nm or less, (2) a film deposition rate of 100 nm/min or higher by a plasma excitation chemical vapor deposition method and (3) an in-film carbon concentration of 3.0 atom% or less measured by an X-ray photoelectron spectrometry method (XPS).SELECTED DRAWING: None 【課題】短時間で成膜可能であり、かつ５００ｎｍ以下の膜厚でも９．０×１０－３ｇ／ｍ２・ｄａｙオーダー以下の水蒸気透過率（ＷＶＴＲ）を示す高いガスバリア性能と高い成膜速度を有する酸化ケイ素膜、ガスバリア膜用材料、及び該ガスバリア膜用材料を用いた酸化ケイ膜の製造方法を提供する【解決手段】以下の（１）～（３）の要件を満たすことを特徴とする酸化ケイ素膜。（１）膜厚５００ｎｍ以下における水蒸気透過率（ＷＶＴＲ）が９．０×１０－３ｇ／ｍ２・ｄａｙ以下（２）プラズマ励起化学気相成長法による成膜速度が１００ｎｍ／ｍｉｎ以上（３）Ｘ線光電子測定分光法（ＸＰＳ）で測定した膜中炭素濃度が３．０ａｔｏｍ％以下【選択図】 なし