PROJECTION EXPOSURE APPARATUS HAVING DEVICE FOR DETERMINING CONCENTRATION OF ATOMIC HYDROGEN

To provide a projection exposure apparatus for semiconductor lithography, which has a device for determining the concentration of atomic hydrogen in plasma in a region of an optical element.SOLUTION: A device includes a sensor (32, 32.1, 32.2, 32.3, 32.4), In this case, the device includes a filter...

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Bibliographic Details
Main Authors EHM DIRK HEINRICH, MORITZ BECKER
Format Patent
LanguageEnglish
Japanese
Published 07.10.2022
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Summary:To provide a projection exposure apparatus for semiconductor lithography, which has a device for determining the concentration of atomic hydrogen in plasma in a region of an optical element.SOLUTION: A device includes a sensor (32, 32.1, 32.2, 32.3, 32.4), In this case, the device includes a filter element (31, 31.1, 31.2, 31.3, 31.4) arranged between a region of plasma (29) and the sensor (32, 32.1, 32.2, 32.3, 32.4), where the filter element (31, 31.1, 31.2, 31.3, 31.4) is configured to predominantly allow the passage of atomic hydrogen from the plasma (29) to the sensor (32, 32.1, 32.2, 32.3, 32.4).SELECTED DRAWING: Figure 4 【課題】光学素子の領域のプラズマ内の原子状水素の濃度を判定するデバイスを備える、半導体リソグラフィのための投影露光装置を提供する。【解決手段】デバイスは、センサ(32、32.1、32.2、32.3、32.4)を備える。この場合、デバイスは、プラズマ(29)の領域とセンサ(32、32.1、32.2、32.3、32.4)との間に配置されたフィルタ素子(31、31.1,31.2、31.3、31.4)を備え、フィルタ素子(31、31.1、31.2、31.3、31.4)は、主に、プラズマ(29)からセンサ(32、32.1、32.2、32.3、32.4)への原子状水素の通過を可能にするように構成される。【選択図】図4
Bibliography:Application Number: JP20220006694