YTTRIUM OXIDE SINTERED BODY, METHOD OF PRODUCING THE SAME, AND MEMBER FOR SEMICONDUCTOR PRODUCTION DEVICE

• Main Authors: TSUTAI YOSHIFUMI, TAKAHASHI YUKI
• Format: Patent
• Language: English; Japanese
• Published: 07.10.2022
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMISTRY; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; TREATMENT OF NATURAL STONE

To provide an yttrium oxide sintered body that can be calcined at a low temperature and is excellent in plasma resistance, a method of producing the same, and a member for a semiconductor production device.SOLUTION: A yttrium oxide sintered body whose primary component is yttrium oxide, includes not less than 0.1 mass% and not more than 0.5 mass% of aluminum in terms of oxide, with the content of metal other than yttrium and aluminum being not more than 1000 ppm and its relative density being not lower than 98%, so that its plasma resistance can be made equal to or better than that of a high purity (purity of not lower than 99.9%) yttrium oxide sintered body. The yttrium oxide sintered body has a sufficiently high relative density, resulting in higher plasma resistance and excellent strength as a sintered body, so that it can be also suitable as a large sized member.SELECTED DRAWING: Figure 1 【課題】低温での焼成が可能であり、耐プラズマ性に優れる酸化イットリウム質焼結体、その製造方法、および半導体製造装置用部材を提供する。【解決手段】酸化イットリウム質焼結体であって、酸化イットリウムを主成分とし、酸化物換算でアルミニウムを０．１質量％以上０．５質量％以下含み、イットリウムおよびアルミニウムを除く金属の含有量が１０００ｐｐｍ以下であり、相対密度が９８％以上であることを特徴としている。これにより、その耐プラズマ性を高純度（９９．９％以上）の酸化イットリウム焼結体の耐プラズマ性と遜色のないレベルにすることができる。また、相対密度が十分に高いので、耐プラズマ性を高くでき、焼結体としての強度に優れ、大型の部材としても好適に使用することができる。【選択図】図１