METHOD FOR PRODUCING POROUS SILICON MATERIAL, POROUS SILICON MATERIAL, AND ELECTRICITY STORAGE DEVICE

• Main Authors: MATSUBARA MASAHARU, WASEDA TETSUYA, SUZUKI RYO, NAGAMEGURI NAOYUKI, YOSHIDA ATSUSHI, KAWAURA HIROYUKI, KONDO YASUHITO, OTAKI MITSUTOSHI
• Format: Patent
• Language: English; Japanese
• Published: 07.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; CHEMISTRY; COMPOUNDS THEREOF; ELECTRICITY; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY

To provide a method for producing a porous silicon material containing Si capable of more suppressing reduction of charging and discharging characteristics.SOLUTION: The method for producing a porous silicon material includes a precursor step of melting, quenching and solidifying a raw material containing Si and Al to obtain a precursor of a silicon alloy and a porosification step of removing an Al component contained in the silicon alloy to obtain a porous silicon material.SELECTED DRAWING: None 【課題】Ｓｉを含む材料において、充放電特性の低下をより抑制する。【解決手段】本開示の多孔質シリコン材料の製造方法は、ＳｉとＡｌとＴｉとを含む原料を溶融し急冷凝固させシリコン合金の前駆体を得る前駆体工程と、シリコン合金に含まれるＡｌ成分を除去して多孔質シリコン材料を得る多孔化工程と、を含む。【選択図】なし