POLISHING COMPOSITION, POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD

• Main Author: MAE RYOTA
• Format: Patent
• Language: English; Japanese
• Published: 06.10.2022
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; INORGANIC CHEMISTRY; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-METALLIC ELEMENTS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; TRANSPORTING

To provide a polishing composition by which a polishing target containing polycrystal silicon doped with an n-type impurity can be polished at a high polishing speed.SOLUTION: A polishing composition comprises abrasive grains, and a dispersion medium. The abrasive grains include: first silica grains...