POLISHING COMPOSITION, POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD

• Main Author: MAE RYOTA
• Format: Patent
• Language: English; Japanese
• Published: 06.10.2022
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; INORGANIC CHEMISTRY; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-METALLIC ELEMENTS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; TRANSPORTING

To provide a polishing composition by which a polishing target containing polycrystal silicon doped with an n-type impurity can be polished at a high polishing speed.SOLUTION: A polishing composition comprises abrasive grains, and a dispersion medium. The abrasive grains include: first silica grains of which the silanol group density is over 0/nm2 and equal to or less than 4/nm2; and second silica grains of which the silanol group density is over 4/nm2 and equal to or less than 12/nm2. The polishing composition exhibits over pH6.SELECTED DRAWING: None 【課題】ｎ型不純物がドープされた多結晶シリコンを含む研磨対象物を、高い研磨速度で研磨することができる研磨用組成物が提供される。【解決手段】砥粒と、分散媒と、を含む研磨用組成物であって、前記砥粒が、シラノール基密度が０個／ｎｍ２を超えて４個／ｎｍ２以下である第１のシリカ粒子と、シラノール基密度が４個／ｎｍ２を超えて１２個／ｎｍ２以下である第２のシリカ粒子と、を含み、ｐＨが６を超える、研磨用組成物。【選択図】なし