SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

To provide a semiconductor device and a manufacturing method thereof that are highly resistant to both inelastic strain and electromigration.SOLUTION: A semiconductor device 2 includes a substrate 20, a semiconductor element 10 facing the substrate 20 in the normal direction to the substrate 20, and...

Full description

Saved in:
Bibliographic Details
Main Author NAGAI SHOHEI
Format Patent
LanguageEnglish
Japanese
Published 06.10.2022
Subjects
BASIC ELECTRIC ELEMENTS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
Online AccessGet full text

Cover

More Information
Summary:To provide a semiconductor device and a manufacturing method thereof that are highly resistant to both inelastic strain and electromigration.SOLUTION: A semiconductor device 2 includes a substrate 20, a semiconductor element 10 facing the substrate 20 in the normal direction to the substrate 20, and a Sn-based solder layer 30 that joins the semiconductor element 10 to the substrate 20. A C-axis 31a of a Sn crystal contained in the Sn-based solder layer 30 intersects a normal line 22 at an angle greater than 45 degrees at a central portion 32 of the Sn-based solder layer 30 when viewed from the normal direction. A C-axis 31b intersects the normal line 22 at an angle of 45 degrees or less at a peripheral portion 33 surrounding the central portion 32, or the C-axis 31b is parallel to the normal line 22. At the central portion 32, an electromigration suppressing effect is obtained, and inelastic strain is suppressed at the peripheral portion 33. Due to the suppression of the inelastic strain at the peripheral portion 33, the inelastic strain at the central portion 32 surrounded by the peripheral portion 33 is also suppressed.SELECTED DRAWING: Figure 2 【課題】非弾性歪とエレクトロマイグレーションの双方に対して耐性が高い半導体装置とその製造方法を提供する。【解決手段】半導体装置２は、基板２０と、基板２０の法線方向で基板２０に対向している半導体素子１０と、半導体素子１０を基板２０に接合するＳｎ系はんだ層３０と、を備える。Ｓｎ系はんだ層３０に含まれるＳｎ結晶のＣ軸３１ａは、法線方向から見たときのＳｎ系はんだ層３０の中央部３２において法線２２と４５度より大きい角度で交差する。Ｃ軸３１ｂは、中央部３２を囲む周辺部３３において法線２２と４５度以下の角度で交差するか又はＣ軸３１ｂは法線２２と平行である。中央部３２ではエレクトロマイグレーション抑制効果が得られ、周辺部３３では非弾性歪が抑えられる。周辺部３３の非弾性歪が抑えられることで、周辺部３３に囲まれている中央部３２でも非弾性歪が抑えられる。【選択図】図２
Bibliography:Application Number: JP20210048077