FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: KONDO YUSUKE, YAMAZAKI SOICHI
• Format: Patent
• Language: English; Japanese
• Published: 03.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a film deposition apparatus that can suppress warpage of a film deposited body, and to provide a film deposition method and a method for manufacturing a semiconductor device.SOLUTION: A film deposition apparatus 500 includes: an electrode 520; a holding part 510 for holding a semiconductor substrate 20 on which a processed film 50 is formed; and a suppression member 540 disposed between the electrode 520 and the holding part 510 and suppressing film deposition with respect to part of surface of the processed film 50. The suppression member 540 includes: a lattice part 542 including a plurality of openings OP; and a ring part 541 for supporting the lattice part 542.SELECTED DRAWING: Figure 8 【課題】被成膜体の反りを抑制することのできる成膜装置、成膜方法、及び半導体装置の製造方法を提供する。【解決手段】成膜装置５００は、電極５２０と、被加工膜５０が形成された半導体基板２０を保持する保持部５１０と、電極５２０と保持部５１０の間に配置され、被加工膜５０の表面の一部に対する成膜を抑制する抑制部材５４０と、を備える。抑制部材５４０は、複数の開口ＯＰを有する格子部５４２と、格子部５４２を支持するリング部５４１と、を含む。【選択図】図８