SUBSTRATE TREATING METHOD AND SUBSTRATE TREATING APPARATUS

• Main Authors: KIM TAE HEE, CHOI HAE-WON, KORIAKIN ANTON, SUNG JIN YEONG, WON JOON HO, CHOI KI HOON, KIM MIN WOO, HEO PIL KYUN, KIM EUNG SOO, LEE JANG JIN
• Format: Patent
• Language: English; Japanese
• Published: 29.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate treating method and a substrate treating apparatus that are capable of minimizing a drying mark occurring on a substrate.SOLUTION: The method for treating a substrate comprises a pressurization step S31, a flow step S32, and a depressurization step S33. The pressurization step S31 comprises: a bottom supply process S31-1 for increasing the pressure of an inner space of a body by supplying a treating fluid to a bottom region of the substrate taken into the inner space; a discharge process S31-2 for decreasing the pressure of the inner space; and a top supply process S31-3 of increasing the pressure of the inner space by supplying the treating fluid to a top region of the substrate taken into the inner space.SELECTED DRAWING: Figure 9 【課題】基板上に乾燥跡が発生することを最小化できる基板を処理する方法及び基板処理装置を提供する。【解決手段】本発明の基板を処理する方法は、加圧段階Ｓ３１と、流動段階Ｓ３２と、そして、減圧段階Ｓ３３を含み、加圧段階Ｓ３１は、ボディーの内部空間に搬入された基板の下部領域に処理流体を供給して内部空間の圧力を高める下部供給Ｓ３１-１と、内部空間の圧力を低める排出工程Ｓ３１-２と、内部空間に搬入された基板の上部領域に処理流体を供給して内部空間の圧力を高める上部供給工程Ｓ３１-３と、を含む。【選択図】図９