SUBSTRATE PROCESSING APPARATUS

• Main Authors: ISHII HIROAKI, NAKAI HITOSHI
• Format: Patent
• Language: English; Japanese
• Published: 29.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate processing apparatus capable of processing both an upper surface and a lower surface of a substrate in one chamber.SOLUTION: A substrate processing apparatus 100 includes a first substrate holding unit 3, a second substrate holding unit 5, a nozzle 9, a nozzle unit 23a, a first lift driving unit 41, and a chamber 1. A rotation driving unit 27 rotates the first substrate holding unit 3 with a rotation axial line AX as a center. The second substrate holding unit 5 is coupled to the first substrate holding unit 3 and rotates. The nozzle 9 is held by the first substrate holding unit 3 and discharges a first process fluid FL1 toward a peripheral part EG of an upper surface Wa of a substrate W during rotation. The nozzle unit 23a is held by the second substrate holding unit 5 and discharges a second process fluid FL2 toward a lower surface Wb of the substrate W during rotation. As the first substrate holding unit 3 and the second substrate holding unit 5 are lifted relatively by the first lift driving unit 41, the substrate W is transported between the first substrate holding unit 3 and the second substrate holding unit 5.SELECTED DRAWING: Figure 2 【課題】１つのチャンバ内で基板の上面及び下面の両方を処理することが可能な基板処理装置を提供する。【解決手段】基板処理装置１００は、第１基板保持部３と、第２基板保持部５と、ノズル９と、ノズル部２３ａと、第１昇降駆動部４１と、チャンバ１とを備える。回転駆動部２７は、回転軸線ＡＸを中心として第１基板保持部３を回転させる。第２基板保持部５は、第１基板保持部３に連結して回転する。ノズル９は、第１基板保持部３に保持されて回転中の基板Ｗの上面Ｗａの周縁部ＥＧに向かって第１処理流体ＦＬ１を吐出する。ノズル部２３ａは、第２基板保持部５に保持されて回転中の基板Ｗの下面Ｗｂに第２処理流体ＦＬ２を吐出する。第１昇降駆動部４１により第１基板保持部３及び第２基板保持部５が相対的に昇降されることによって、第１基板保持部３と第２基板保持部５との間で基板Ｗが受け渡される。【選択図】図２