SEMICONDUCTOR DEVICE

• Main Authors: TANIHIRA KEI, HIRATA NAOFUMI, KURAGUCHI TOMOMI, UEKI SHINICHI, HORI YOICHI
• Format: Patent
• Language: English; Japanese
• Published: 29.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of improving current/voltage characteristics.SOLUTION: A semiconductor device has a semiconductor part including a first semiconductor layer of a first conductive type, a first electrode provided on a back surface of the semiconductor part, and a second electrode provided on a surface of the semiconductor part. The second electrode includes a barrier layer in contact with the first semiconductor layer and comprising vanadium as a major component, and a metal layer provided on the barrier layer.SELECTED DRAWING: Figure 1 【課題】電流・電圧特性を向上させることが可能な半導体装置を提供する。【解決手段】半導体装置は、第１導電形の第１半導体層を含む半導体部と、前記半導体部の裏面上に設けられる第１電極と、前記半導体部の表面上に設けられる第２電極と、を備える。前記第２電極は、前記第１半導体層に接し、バナジウムを主成分とする障壁層と、前記障壁層上に設けられる金属層と、を含む。【選択図】図１