INTEGRATED CIRCUIT DEVICE AND OSCILLATOR

• Main Author: UNO TOMOHIRO
• Format: Patent
• Language: English; Japanese
• Published: 26.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION OF NOISE BY SUCH CIRCUITS; GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER; SEMICONDUCTOR DEVICES

To provide an integrated circuit device and the like capable of suppressing reduction in heating performance caused by parasitic resistance of a heat generating transistor.SOLUTION: An integrated circuit device 20 includes a heat generating circuit 22 controlled on the basis of a temperature control signal. The heat generating circuit 22 includes: a heat generating transistor TR that has a plurality of parallel-connected transistors T1 to T6 whose gate voltages are controlled on the basis of the temperature control signal; a metal wire ALS overlapped with the plurality of transistors T1 to T6 in a plan view and that supplies the ground to a source of the heat generating transistor TR; and a plurality of vias VC whose one end is connected with the metal wire ALS and whose the other end is connected with a plurality of source regions of the plurality of transistors T1 to T6. The plurality of vias VC are provided at positions overlapped with the plurality of source regions in a plan view.SELECTED DRAWING: Figure 6 【課題】発熱トランジスターの寄生抵抗に起因する発熱性能の低下を抑制できる集積回路装置等の提供。【解決手段】集積回路装置２０は、温度制御信号に基づいて制御される発熱回路２２を含み、発熱回路２２は、温度制御信号に基づいてゲート電圧が制御され且つ並列接続された複数のトランジスターＴ１～Ｔ６を有する発熱トランジスターＴＲと、複数のトランジスターＴ１～Ｔ６と平面視において重なり、発熱トランジスターＴＲのソースにグランドを供給する金属配線ＡＬＳと、一端が金属配線ＡＬＳに接続され、他端が複数のトランジスターＴ１～Ｔ６の複数のソース領域に接続される複数のビアＶＣを含む。そして複数のビアＶＣは、平面視において、複数のソース領域と重なる位置に設けられる。【選択図】図６