SILICON CARBIDE POWDER AND METHOD FOR PRODUCING THE SAME

• Main Authors: HORIGUCHI KAORI, SUZUKI MASAHARU, MATSUSHITA SHUYA, NAKAI NAOTO, MASUDA KENTA
• Format: Patent
• Language: English; Japanese
• Published: 21.09.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a silicon carbide powder that uniformly contains an acceptor element and a donor element and can easily produce a silicon carbide single crystal having low resistivity and sufficient performance, and to provide a method for producing the same.SOLUTION: A method comprises the steps of: mixing a carbonaceous raw material, an inorganic silicic raw material, a boron compound, and a nitrogen compound to prepare a powder raw material containing boron at 5 ppm or more and 500 ppm or less and nitrogen at 10 ppm or more and 2,000 ppm or less; firing the powder raw material at a temperature of 2,000°C or more and 3,000°C or less; and pulverizing the fired product obtained by firing. Thus, a silicon carbide powder serving as a raw material for producing a silicon carbide single crystal having low resistivity and sufficient performance can be produced.SELECTED DRAWING: Figure 1 【課題】アクセプター元素およびドナー元素を均一に含有し、抵抗率が低く、かつ十分な性能を有する炭化ケイ素単結晶を容易に製造できる炭化ケイ素粉末およびその製造方法を提供する。【解決手段】炭素質原料、無機ケイ酸質原料、ホウ素化合物および窒素化合物を混合してホウ素が５ｐｐｍ以上５００ｐｐｍ以下、窒素が１０ｐｐｍ以上２０００ｐｐｍ以下含有される粉末原料を準備する工程と、粉末原料を２０００℃以上３０００℃以下の温度で焼成する工程と、焼成により得られた焼成物を粉砕する工程と、を含む。これにより、抵抗率が低く、かつ十分な性能を有する炭化ケイ素単結晶を製造するための原料となる炭化ケイ素粉末を製造できる。【選択図】図１