METHOD OF PRODUCING SILICON CARBIDE POWDER

• Main Authors: HORIGUCHI KAORI, TAKANO MIKU, NAKAI NAOTO, MASUDA KENTA
• Format: Patent
• Language: English; Japanese
• Published: 06.09.2022
• Subjects: CHEMISTRY; COMPOUNDS THEREOF; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS

To provide a method of producing silicon carbide powder, capable of uniformly controlling the amount of boron contained therein at several tens of ppm.SOLUTION: The method of producing silicon carbide powder comprises the steps of: adding boron carbide with any of particles in a particle size range having a particle diameter smaller than that of a silicon carbide raw material, to the silicon carbide raw material to prepare a plurality of powder raw materials; filling a furnace with a plurality of powder raw materials P1 and P2 in such a manner that a powder raw material with a boron carbide raw material contained therein having a smaller particle size, out of the plurality of powder raw materials, is placed on the bottom of a furnace; and calcinating the powder raw materials filled in the furnace. By placing the powder raw material having a smaller particle size on the bottom of the furnace, out of the plurality of powder raw materials, uneven distribution of a trace amount of boron resulting from the migration of the boron carbide particles in the downward direction during calcination can be suppressed.SELECTED DRAWING: Figure 1 【課題】含有されるホウ素を数十ｐｐｍに均一に制御できる炭化ケイ素粉末の製造方法を提供する。【解決手段】炭化ケイ素粉末の製造方法は、炭化ケイ素原料に対し、粒度範囲内のいずれの粒径も炭化ケイ素原料より小さい炭化ホウ素を添加し、複数の粉末原料を準備する工程と、複数の粉末原料のうち、含有される炭化ケイ素原料の粒度範囲が小さい粉末原料を炉内の底部に配置して複数の粉末原料Ｐ１、Ｐ２を炉内に充填する工程と、充填された粉末原料を焼成する工程と、を含む。このように複数の粉末原料のうち粒度が小さい粉末原料を炉内の底部に配置することで、焼成時に炭化ホウ素粒子が下方へ移動することで生じる微量なホウ素の偏在化を抑制できる。【選択図】図１