GALLIUM NITRIDE WAFER AND METHOD OF MANUFACTURING SEMICONDUCTOR CHIP

To provide a method of manufacturing a semiconductor chip, capable of improving productivity.SOLUTION: In preparing a GaN wafer 1 in a method of manufacturing a semiconductor chip, the followings are performed: preparing a bulk wafer 100 that comprises GaN and has a first main surface 100a made as a...

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Bibliographic Details
Main Authors NAGAYA MASATAKE, OHARA ATSUSHI
Format Patent
LanguageEnglish
Japanese
Published 02.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Summary:To provide a method of manufacturing a semiconductor chip, capable of improving productivity.SOLUTION: In preparing a GaN wafer 1 in a method of manufacturing a semiconductor chip, the followings are performed: preparing a bulk wafer 100 that comprises GaN and has a first main surface 100a made as a gallium surface while having a second main surface 100b made as a nitrogen surface, the second main surface being on an opposing side to the first main surface 100a; preparing an auxiliary wafer 110 on which a GaN layer 112 is laminated, on a basic wafer 111 comprising a material different from GaN; separating the GaN layer from the auxiliary wafer 110 and constructing a bonded wafer 114 having a first main surface 114a made as a gallium surface while having a second main surface 114b made as a nitrogen surface, the second main surface being on an opposing side to the first main surface; and preparing a GaN wafer having one surface 1a and the other surface 1b which are made as a gallium surface, by bonding the nitrogen surface of the bulk wafer 110 and the nitrogen surface of the bonded wafer 114.SELECTED DRAWING: Figure 2D 【課題】生産性の向上を図ることができる半導体チップの製造方法を提供する。【解決手段】ＧａＮウェハ１を用意することでは、ＧａＮで構成され、第１主面１００ａがガリウム面とされると共に第１主面１００ａと反対側の第２主面１００ｂが窒素面とされたバルクウェハ１００を用意することと、ＧａＮと別の材料で構成される基礎ウェハ１１１上に、ＧａＮ層１１２が積層された補助ウェハ１１０を用意することと、補助ウェハ１１０からＧａＮ層を分離し、第１主面１１４ａがガリウム面とされると共に第１主面と反対側の第２主面１１４ｂが窒素面とされた接合ウェハ１１４を構成することと、バルクウェハ１１０の窒素面と接合ウェハ１１４の窒素面とを接合することにより、一面１ａおよび他面１ｂがガリウム面とされたＧａＮウェハを用意することと、を行う。【選択図】図２Ｄ
Bibliography:Application Number: JP20210026897