SEMICONDUCTOR MEMORY DEVICE

• Main Authors: IINO HIROMITSU, TAKESHITA SHUMPEI, NOJIMA KAZUHIRO, YAMAMOTO NAOKI
• Format: Patent
• Language: English; Japanese
• Published: 30.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor memory device with easy formation of step sections.SOLUTION: A semiconductor memory device 10 has a stacking section 100 in which a plurality of conductor layers 40 are stacked along the z-direction and a step section 200 in which a plurality of conductor layers 40 are drawn in a staircase-like manner along the y-direction. The step section 200 includes a lower step section 220 and an upper step section 210. In the upper step section 210, the conductor layer 40 is formed so that the conductor layer extends longer toward one side along the y direction as it goes toward the lower step section 220 along the z direction. The lower step section 220 is formed at a position that is opposite to the above one side along the y direction than the upper step section 210.SELECTED DRAWING: Figure 2 【課題】階段部の形成が容易な半導体記憶装置を提供する。【解決手段】半導体記憶装置１０は、複数の導電体層４０がｚ方向に沿って積層されている積層部１００と、複数の導電体層４０がｙ方向に沿って階段状に引き出されている階段部２００と、を備える。階段部２００には、下側階段部２２０と上側階段部２１０とが含まれている。上側階段部２１０では、ｚ方向に沿って下側階段部２２０側に行く程、導電体層４０がｙ方向に沿った一方側へと向かって長く伸びるように形成されている。下側階段部２２０は、上側階段部２１０よりも、ｙ方向に沿って上記の一方側とは反対側となる位置に形成されている。【選択図】図２