HOLLOW PARTICLES, HEAT INSULATING COATING MATERIAL AND HEAT INSULATING COATING FILM
To provide hollow particles capable of further exhibiting heat insulating properties of a heat insulating coating film formed from a heat insulating coating material containing the hollow particles.SOLUTION: Since hollow particles 2 of the present invention have an average particle diameter of 10 to...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
15.08.2022
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Subjects | |
Online Access | Get full text |
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Summary: | To provide hollow particles capable of further exhibiting heat insulating properties of a heat insulating coating film formed from a heat insulating coating material containing the hollow particles.SOLUTION: Since hollow particles 2 of the present invention have an average particle diameter of 10 to 200 nm, when the hollow particles are contained in a heat insulating coating material, a heat insulating coating film 1 in which the heat insulating coating material is transparent can be formed. Although the hollow particles 2 are hydrophilic because they are formed from siloxane bonds, they can be made compatible with an organic solvent-based heat insulating coating material because they are modified with a surface modifier. The hollow particles 2 having a hydrophilic siloxane bond as a base material have remarkable hydrophilicity when the heat insulating coating film is formed, and are excluded so that the concentration increases from the inside of the heat insulating coating film toward the surface layer, and an aggregate 3 of the hollow particles 2 in the order of μm is formed on the surface layer of the heat insulating coating film 1.SELECTED DRAWING: Figure 1
【課題】中空粒子を含有する断熱塗料から形成される断熱塗膜の断熱性をより発揮することができる中空粒子を提供すること。【解決手段】本発明の中空粒子2は、平均粒子径が10~200nmであるため、断熱塗料に含有させたとき、断熱塗料が透明な断熱塗膜1を形成することができる。中空粒子2は、シロキサン結合から形成されているため親水性であるものの、表面修飾剤によって修飾されているため、有機溶剤系の断熱塗料と相溶させることができる。親水性のシロキサン結合を母体とする中空粒子2は、断熱塗料が成膜する際に、親水性が顕著になり、断熱塗料の内部から表層に向けて濃度が濃くなるように排斥され、断熱塗膜1の表層に中空粒子2のμmオーダーの凝集体3を形成する。【選択図】図1 |
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Bibliography: | Application Number: JP20210014904 |