TEMPERATURE CONTROL METHOD AND SUBSTRATE PROCESSING DEVICE

• Main Author: IGARASHI MASARU
• Format: Patent
• Language: English; Japanese
• Published: 12.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a temperature control method and a substrate processing device with which it is possible to correct a temperature change of a substrate in each process.SOLUTION: The temperature control method includes: acquiring a temperature TB of a temperature adjustment medium before a temperature change when carrying out a plurality of processes n in which heat input occurs to a substrate placed on a placement plane of a stage and a pressure Pn of a heat transfer gas supplied to a discharge opening of the stage for each process n and a temperature TWn of the substrate; acquiring, for each process n after a temperature change, a temperatures TW'n,max of the substrate when the pressure of the transfer gas is reduced to below the pressure Pn and a temperature TW'n,min of the substrate when the pressure of the transfer gas is increased to above the pressure Pn, with the temperature TB adopted as the temperature of the temperature adjustment medium; adjusting the temperature of the temperature adjustment medium to a temperature TB" that satisfies formula (1); and adjusting, for each process n, the pressure of the heat transfer gas so that the temperature of the substrate is the temperature TWn. Formula (1): TB+max(TWn-TW'n,max)≤TB"≤TB+min(TWn-TW'n,min).SELECTED DRAWING: Figure 3 【課題】プロセス毎の基板の温度の変化を補正可能な温度制御方法及び基板処理装置を提供する。【解決手段】温度制御方法は、ステージの載置面に載置された基板に入熱が発生する複数のプロセスｎを実施する際の温度変化前の温調媒体の温度ＴＢと、プロセスｎ毎のステージの吐出口へ供給する伝熱ガスの圧力Ｐｎ及び基板の温度ＴＷｎとを取得し、温度変化後に、温調媒体の温度を温度ＴＢとして、プロセスｎ毎に、伝熱ガスの圧力を圧力Ｐｎよりも減少させた場合の基板の温度ＴＷ'ｎ，ｍａｘと、伝熱ガスの圧力を圧力Ｐｎよりも増加させた場合の基板の温度ＴＷ'ｎ，ｍｉｎとを取得し、温調媒体の温度を、以下の式（１）を満たす温度ＴＢ"に調整し、プロセスｎ毎に、基板の温度が温度ＴＷｎとなるよう伝熱ガスの圧力を調整する。ＴＢ＋ｍａｘ（ＴＷｎ－ＴＷ'ｎ，ｍａｘ）≦ＴＢ"≦ＴＢ＋ｍｉｎ（ＴＷｎ－ＴＷ'ｎ,ｍｉｎ）・・・（１）【選択図】図３