MANUFACTURING METHOD OF LIGHT-EMITTING ELEMENT AND EXTRACTING METHOD OF HYDROGEN FROM LIGHT-EMITTING ELEMENT

• Main Authors: MIWA HIROSHI, ISHIGURO NAGATAKA, MATSUI SHINICHI, SAITO YOSHIKI, BOYAMA SHINYA, NAGATA KENGO, TAKEUCHI TETSUYA
• Format: Patent
• Language: English; Japanese
• Published: 29.07.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a manufacturing method of a light-emitting element and an extracting method of hydrogen from the light-emitting element capable of extracting hydrogen from a p-type layer made of a nitride semiconductor without reducing the output of the light-emitting element, and capable of effectively extracting hydrogen even when the p-type layer is made of a nitride semiconductor with a high Al composition.SOLUTION: A manufacturing method of a light-emitting element 1 according to the present invention includes a step of externally irradiating with ultraviolet light having a wavelength of 306 nm or less and performing heat treatment to extract hydrogen in a p-type layer to the outside of the light emitting element 1 in a state in which a reverse voltage or a forward voltage lower than the rising voltage of the light emitting element 1 is applied to the light emitting element 1 having an emission wavelength of 306 nm or less, or a voltage is not applied, and the step of extracting hydrogen in the p-type layer to the outside of the light-emitting element 1 is performed in an N2 atmosphere at 650°C or higher or in an N2+O2 atmosphere at 500°C or higher.SELECTED DRAWING: Figure 1 【課題】発光素子の出力を低下させることなく、窒化物半導体からなるｐ型層から水素を抜き出すことができる発光素子の製造方法、及び発光素子の水素の抜き出し方法であって、ｐ型層が高Ａｌ組成の窒化物半導体からなる場合であっても効果的に水素を抜き出すことができる発光素子の製造方法、及び発光素子の水素の抜き出し方法を提供する。【解決手段】本発明の一態様として、発光波長が３０６ｎｍ以下である発光素子１に、逆方向電圧若しくは発光素子１の立ち上がり電圧よりも低い順方向電圧を印加した状態、又は電圧を印加しない状態で、波長が３０６ｎｍ以下の紫外光を外側から照射し、熱処理を施して、ｐ型層中の水素を発光素子１の外に抜き出す工程を含み、ｐ型層中の水素を発光素子１の外に抜き出す工程を、６５０℃以上のＮ２雰囲気下、又は５００℃以上のＮ２＋Ｏ２雰囲気下で実施する、発光素子１の製造方法を提供する。【選択図】図１