PHOTODETECTOR, PHOTODETECTION SYSTEM, LIDAR DEVICE, MOBILE BODY, AND VEHICLE

To provide a photodetector, photodetection system, lidar device, mobile body, and vehicle capable of improving performance.SOLUTION: The photodetector includes a plurality of elements, a quench section, a plurality of lenses, and a refractive layer. Each of the plurality of elements includes a first...

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Main Authors SASAKI KEITA, FUJIWARA IKUO, SUZUKI KAZUHIRO, SHIMIZU MARIKO, OKAMOTO KAZUAKI, KWON HONAM
Format Patent
LanguageEnglish
Japanese
Published 21.07.2022
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Summary:To provide a photodetector, photodetection system, lidar device, mobile body, and vehicle capable of improving performance.SOLUTION: The photodetector includes a plurality of elements, a quench section, a plurality of lenses, and a refractive layer. Each of the plurality of elements includes a first semiconductor region of first conductivity type, a second semiconductor region of first conductivity type provided on top of the first semiconductor region and having a higher impurity concentration of first conductivity type than the first semiconductor region, and a third semiconductor region of second conductivity type provided on top of the second semiconductor region. The plurality of elements are aligned in a first period in a second direction that intersects a first direction heading from the first semiconductor region to the second semiconductor region. The quench section is electrically connected to the third semiconductor region. The plurality of lenses are provided on each of the plurality of elements. The refractive layer is provided on the portion between the plurality of elements and the plurality of lenses and has a first thickness. The ratio of the first thickness to the first period is 0.16 or more to 0.72 or less.SELECTED DRAWING: Figure 2 【課題】性能を向上可能な、光検出器、光検出システム、ライダー装置、移動体及び車を提供する。【解決手段】実施形態によれば、光検出器は、複数の素子と、クエンチ部と、複数のレンズと、屈折層と、を含む。複数の素子のそれぞれは、第1導電形の第1半導体領域と、第1半導体領域の上に設けられ第1半導体領域よりも高い第1導電形の不純物濃度を有する第1導電形の第2半導体領域と、第2半導体領域の上に設けられた第2導電形の第3半導体領域と、を含む。複数の素子は、第1半導体領域から第2半導体領域へ向かう第1方向と交差する第2方向において第1周期で並ぶ。クエンチ部は、第3半導体領域と電気的に接続される。複数のレンズは、複数の素子のそれぞれの上に設けられる。屈折層は、複数の素子と複数のレンズとの間に設けられ第1厚さある。第1周期に対する第1厚さの比は、0.16以上0.72以下である。【選択図】図2
Bibliography:Application Number: JP20210002071