BLANK MASK AND PHOTOMASK INCLUDING THE SAME

• Main Authors: LEE HYEONG JU, CHOI SUK YOUNG, SON SUNG HOON, KIM SOOHYUN, KIM KYUHUN, KIM SUHYEON, JEONG MIN GYO, RYU JI YEON, SHIN INKYUN
• Format: Patent
• Language: English; Japanese
• Published: 13.07.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

To provide a blank mask that can easily form a fine pattern and a photomask including the same.SOLUTION: A blank mask includes a transparent substrate 10, a phase shift film 20, and a light shielding film 30 and has a TFT1 value of 0.25 μm/100°C or less expressed by the following formula. When the thermal variation of the processed blank mask, which is formed by processing the thickness of the transparent substrate of the blank mask to be 0.6 mm and removing the light shielding film, is analyzed in a thermomechanical analyzer, the measuring temperature of the thermomechanical analyzer is increased from T1 to T2, where ▵PM is a positional change of the upper surface of the phase shift film in the thickness direction at T2, based on a position of the upper surface of the phase shift film at T1.SELECTED DRAWING: Figure 1 【課題】微細パターンを容易に形成することができるブランクマスク及びそれを用いたフォトマスクを提供する。【解決手段】ブランクマスクは、透明基板１０、位相反転膜２０、遮光膜３０を含み、下記式で表されるＴＦＴ１値が０．２５μｍ／１００℃以下である。JPEG2022105275000024.jpg1547ブランクマスクの透明基板の厚さを０．６ｍｍに加工し、遮光膜を除去して形成された、加工されたブランクマスクの熱的変動が熱機械的分析装置で分析されるとき、熱機械的分析装置の測定温度がＴ１からＴ２に上昇し、△ＰＭは、Ｔ１での位相反転膜の上面を基準として、Ｔ２での厚さ方向への位相反転膜の上面の位置の変化である。【選択図】図１