MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT, AND CHEMICAL SOLUTION USED FOR MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT

• Main Authors: TAKAHASHI KAZUHIRO, WADA YUKIHISA
• Format: Patent
• Language: English; Japanese
• Published: 08.07.2022
• Subjects: ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; BASIC ELECTRIC ELEMENTS; CANDLES; CHEMISTRY; DETERGENT COMPOSITIONS; DETERGENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FATTY ACIDS THEREFROM; METALLURGY; RECOVERY OF GLYCEROL; RESIN SOAPS; SEMICONDUCTOR DEVICES; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

To provide a manufacturing method of a semiconductor element including a step capable of sufficiently cleaning and removing a ruthenium residue formed on a substrate surface by bringing a chemical solution into contact with the substrate surface after performing dry etching or chemical mechanical polishing on a ruthenium-containing layer which is positioned in an outermost surface layer of a substrate, and the chemical solution used for the manufacturing method of the semiconductor element.SOLUTION: The present invention relates to a manufacturing method of a semiconductor element including the steps of: performing dry etching or chemical mechanical polishing onto a ruthenium-containing layer which is positioned in an outermost surface layer of a substrate, and then bringing a surface of the substrate into contact with a first chemical solution; and bringing the surface of the substrate after the step of contact with the first chemical solution into contact with a second chemical solution. The manufacturing method is used in which the first chemical solution contains hydroxylamine or a derivative (A1) thereof and an alkali compound (B1) of which the basicity is stronger than that of the hydroxylamine or the derivative (A1) thereof, and the second chemical solution contains ortho-periodic acid (A2) and a basic compound (B2).SELECTED DRAWING: None 【課題】基板の最表層に位置するルテニウム含有層にドライエッチング又は化学機械研磨を行った後の基板表面に薬液を接触させることで、上記基板表面に形成されたルテニウム残渣を十分に洗浄除去できる工程を有する、半導体素子の製造方法、及び当該半導体素子の製造方法に好適に用いられる薬液を提供する。【解決手段】基板の最表層に位置するルテニウム含有層にドライエッチング又は化学機械研磨を行った後に、前記基板の表面を、第一の薬液に接触させる工程と、前記第一の薬液に接触させる工程後の前記基板の表面を、第二の薬液に接触させる工程とを含む、半導体素子の製造方法であって、前記第一の薬液が、ヒドロキシルアミン又はその誘導体（Ａ１）と、該ヒドロキシルアミン又はその誘導体（Ａ１）よりも塩基性の強いアルカリ化合物（Ｂ１）とを含み、前記第二の薬液が、オルト過ヨウ素酸（Ａ２）と塩基性化合物（Ｂ２）とを含む、製造方法を用いる。【選択図】なし