SUSCEPTOR, METHOD FOR GROWING SILICON CARBIDE EPITAXIAL LAYER, AND METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
To provide a susceptor that can extend the life.SOLUTION: A susceptor provided with a recess for arranging a substrate has a main surface, an inner peripheral surface, and a bottom surface. The inner peripheral surface is continuous with the main surface. The bottom surface is continuous with the in...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
07.07.2022
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a susceptor that can extend the life.SOLUTION: A susceptor provided with a recess for arranging a substrate has a main surface, an inner peripheral surface, and a bottom surface. The inner peripheral surface is continuous with the main surface. The bottom surface is continuous with the inner peripheral surface. The recess is composed of the inner peripheral surface and the bottom surface. The inner peripheral surface includes a first side surface extending perpendicular to the bottom surface and a second side surface connected to each of the first side surface and the main surface. In a cross section perpendicular to the main surface, the second side surface is curved or linear. When the second side surface is curved, the second side surface is convex outward. When the second side surface is linear, the second side surface is inclined with respect to each of the main surface and the first side surface portion.SELECTED DRAWING: Figure 2
【課題】寿命を長くすることができるサセプタを提供する。【解決手段】基板を配置するための凹部が設けられたサセプタは、主面と、内周面と、底面とを有している。内周面は、主面に連なっている。底面は、内周面に連なっている。凹部は、内周面と底面とによって構成されている。内周面は、底面に対して垂直に延びる第1側面部と、第1側面部および主面の各々に連なる第2側面部とを含んでいる。主面に対して垂直な断面において、第2側面部は、湾曲状または直線状である。第2側面部が湾曲状の場合、第2側面部は、外側に凸である。第2側面部が直線状の場合、第2側面部は、主面および第1側面部の各々に対して傾斜している。【選択図】図2 |
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Bibliography: | Application Number: JP20200216479 |