METHOD FOR REMOVING UPPER PART OF SACRIFICIAL LAYER, AND SACRIFICIAL SOLUTION, AND ACIDIC AQUEOUS SOLUTION USED THEREFOR

• Main Authors: SEKITO TAKASHI, NAGAHARA TATSURO
• Format: Patent
• Language: English; Japanese
• Published: 05.07.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

To provide a method for removing the upper part of a sacrificial layer.SOLUTION: A method for removing the upper part of a sacrificial layer comprises the following steps: (1) applying a sacrificial solution comprising a polymer having an acid-dissociable protective group (A) and a solvent (B) above a substrate; (2) forming a sacrificial layer from the applied sacrificial solution; (3) bringing an acidic aqueous solution into contact with the surface of the sacrificial layer; and (4) applying a remover to the sacrificial layer.SELECTED DRAWING: Figure 1 【課題】犠牲層の上部を除去する方法の提供。【解決手段】以下のステップを含んでなる犠牲層の上部を除去する方法。（１）酸によって解離する保護基を有するポリマー（Ａ）および溶媒（Ｂ）を含んでなる犠牲溶液を基板の上方に適用すること；（２）適用された犠牲溶液から、犠牲層を形成すること；（３）犠牲層の表面に、酸性水溶液を接触させること；および（４）犠牲層に除去液を適用すること。【選択図】図１