SEMICONDUCTOR DEVICE

• Main Author: NISHIHATA MASAYOSHI
• Format: Patent
• Language: English; Japanese
• Published: 04.07.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device in which an occurrence of electric field concentration in a pressure-resistant structure section is suppressed.SOLUTION: The semiconductor device comprises: a semiconductor substrate 200 including a main surface 200a, an electrode 210 provided to a first region 281 of the main surface, a pressure-resistant structure section 230 provided to a second region 283 which is different from the first region of the main surface, and an intervening section 270 provided to a third region 282 which is between the first and second regions of the main surface; solder 310 provided to the electrode; and a metal terminal 400 including a non-wetting section 420 that is provided to the solder and does not get wet by the solder. The intervening section is less likely to get wet by the solder than the electrode is, and the length of the intervening section in an alignment direction along the main surface and where the first region and the second region are aligned is longer than the length of the non-wetting section in the alignment direction.SELECTED DRAWING: Figure 3 【課題】耐圧構造部に電界集中が起こることの抑制された半導体装置を提供する。【解決手段】主面２００ａと、主面の第１領域２８１に設けられた電極２１０と、主面の第１領域とは異なる第２領域２８３に設けられた耐圧構造部２３０と、主面の第１領域と第２領域の間の第３領域２８２に設けられた介在部２７０と、を備える半導体基板２００と、電極に設けられたはんだ３１０と、はんだに設けられ、はんだに濡れない不濡れ部４２０を備える金属製のターミナル４００と、を有し、介在部は電極よりもはんだに濡れにくく、介在部における主面に沿い、なおかつ、第１領域と第２領域が並ぶ、並び方向の長さが、不濡れ部の並び方向の長さよりも長くなっている。【選択図】図３