SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

• Main Authors: FUJII NOBUTOSHI, SAITO TAKU
• Format: Patent
• Language: English; Japanese
• Published: 30.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device which enables lowering of a temperature of a whole bonding process to room temperature, a method for producing such a semiconductor device; and an electronic device.SOLUTION: The semiconductor device includes: a first insulating film; a plurality of first junction electrodes that are formed on a surface of the first insulating film; a second insulating film; a plurality of second junction electrodes that are formed on a surface of the second insulating film; and a metal film that covers an entirety of a junction surface, which is composed of the first insulating film and the plurality of first junction electrodes, and an entirety of a junction surface, which is composed of the second insulating film and the plurality of second junction electrodes. The first insulating film has a first trench part which is formed between at least some junction electrodes among the plurality of first junction electrodes so as to isolate the metal film between the junction electrodes. The second insulating film has a second trench part which is formed between at least some junction electrodes among the plurality of second junction electrodes so as to isolate the metal film between the junction electrodes.SELECTED DRAWING: Figure 5 【課題】接合プロセス全体の温度を室温まで低温化することが可能な半導体装置、半導体装置の製造方法、及び電子機器を提供する。【解決手段】半導体装置は、第１の絶縁膜と、第１の絶縁膜の表面に形成された複数の第１の接合電極と、第２の絶縁膜と、第２の絶縁膜の表面に形成された複数の第２の接合電極と、第１の絶縁膜及び複数の第１の接合電極からなる接合面の全面、第２の絶縁膜及び複数の第２の接合電極からなる接合面の全面を被覆する金属膜とを備える。第１の絶縁膜は、複数の第１の接合電極のうち少なくとも一部の接合電極間に形成され、接合電極間の金属膜を分離する第１の掘り込み部を有する。第２の絶縁膜は、複数の第２の接合電極のうち少なくとも一部の接合電極間に形成され、接合電極間の金属膜を分離する第２の掘り込み部を有する。【選択図】図５