SEMICONDUCTOR STORAGE DEVICE

• Main Authors: IKEGAMI KAZUTAKA, SHIGA HIDEHIRO
• Format: Patent
• Language: English; Japanese
• Published: 28.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

To provide a semiconductor storage device that reduces power consumption of the semiconductor storage device.SOLUTION: A semiconductor storage device includes: a first word line; a second word line provided on the same layer as the first word line and controlled independently of the first word line; and a plurality of memory pillars arranged in a first direction and a second direction intersecting the first direction, and including a first memory cell facing the first word line and a second memory cell facing the second word line, respectively, that are sandwiched between the first word line and the second word line. After a write operation for the first memory cell included in each of the plurality of memory pillars is completed, the write operation for the second memory cell included in the plurality of memory pillars is performed.SELECTED DRAWING: Figure 17 【課題】半導体記憶装置の消費電力を低減すること。【解決手段】半導体記憶装置は、第１ワード線と、前記第１ワード線と同一層に設けられ、前記第１ワード線とは独立して制御される第２ワード線と、前記第１ワード線と前記第２ワード線とによって挟まれ、それぞれが前記第１ワード線に対向する第１メモリセルと前記第２ワード線に対向する第２メモリセルとを含み、第１方向及び前記第１方向に交差する第２方向に並ぶ複数のメモリピラーと、を有する。前記複数のメモリピラーの各々に含まれる前記第１メモリセルに対する書き込み動作が完了した後に、前記複数のメモリピラーに含まれる前記第２メモリセルに対する書き込み動作が行われる。【選択図】図１７