SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: MUKAI AKIRA, ONO HIROSHI, KAJIWARA AKIHIRO, KURAGUCHI MASAHIKO, DAVID MATTHEW SMITH
• Format: Patent
• Language: English; Japanese
• Published: 28.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device and a method for manufacturing the same that can improve its characteristics.SOLUTION: A semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and a first compound member. A first compound region of the first compound member is between a fourth partial region of the semiconductor member and at least a portion of the third electrode. A first angle between a first side surface of the first compound region and a first surface of the first compound member is less than 90 degrees.SELECTED DRAWING: Figure 1 【課題】特性を向上できる半導体装置及びその製造方法を提供する。【解決手段】実施形態によれば、半導体装置は、第１電極、第２電極、第３電極、半導体部材、及び、第１化合物部材を含む。前記第１化合物部材の第１化合物領域は、前記半導体部材の第４部分領域と第３電極の少なくとも一部との間にある。前記第１化合物領域の第１側面と、前記第１化合物部材の第１面と、の間の第１角度は９０度よりも小さい。【選択図】図１