SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
To provide a semiconductor device and a method for manufacturing the same that can improve its characteristics.SOLUTION: A semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and a first compound member. A first compound region of the first...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
28.06.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | To provide a semiconductor device and a method for manufacturing the same that can improve its characteristics.SOLUTION: A semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and a first compound member. A first compound region of the first compound member is between a fourth partial region of the semiconductor member and at least a portion of the third electrode. A first angle between a first side surface of the first compound region and a first surface of the first compound member is less than 90 degrees.SELECTED DRAWING: Figure 1
【課題】特性を向上できる半導体装置及びその製造方法を提供する。【解決手段】実施形態によれば、半導体装置は、第1電極、第2電極、第3電極、半導体部材、及び、第1化合物部材を含む。前記第1化合物部材の第1化合物領域は、前記半導体部材の第4部分領域と第3電極の少なくとも一部との間にある。前記第1化合物領域の第1側面と、前記第1化合物部材の第1面と、の間の第1角度は90度よりも小さい。【選択図】図1 |
---|---|
Bibliography: | Application Number: JP20200208394 |