PLASMA PROCESSING APPARATUS

• Main Author: OKA SHINSUKE
• Format: Patent
• Language: English; Japanese
• Published: 24.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

To provide a plasma processing apparatus having an embedded member that prevents abnormal discharge in a hole through which a heat transfer gas is passed.SOLUTION: A plasma processing apparatus a dielectric member having a mounting surface on which an object to be processed is mounted and a back surface with respect to the mounting surface, and having a first through hole penetrating the mounting surface and the back surface, a mounting table having a support surface that supports the dielectric member and having a base having a second through hole communicating with the first through hole, and an embedding member arranged inside the first through hole and the second through hole, the embedding member includes a first embedding member arranged in the first through hole and a second embedding member arranged in the second through hole, and the second embedding member has lower rigidity than the first embedding member.SELECTED DRAWING: Figure 2 【課題】伝熱ガスの通孔において異常放電を防止する埋込部材を有するプラズマ処理装置を提供する。【解決手段】被処理体が載置される載置面及び前記載置面に対する裏面を有し、前記載置面と前記裏面を貫通する第１の通孔が形成された誘電体部材と、前記誘電体部材を支持する支持面を有し、前記第１の通孔に連通する第２の通孔が形成された基台と、を有する載置台と、前記第１の通孔及び前記第２の通孔の内部に配置された埋込部材と、を備え、前記埋込部材は、前記第１の通孔に配置された第１の埋込部材と、前記第２の通孔に配置された第２の埋込部材と、を有し、前記第２の埋込部材は、前記第１の埋込部材より剛性が低い、プラズマ処理装置。【選択図】図２