SUBSTRATE PROCESSING DEVICE AND SUBSTRATE SUPPORT UNIT

• Main Authors: KIM SUNG JE, KIM DONG SUK, OGSEN GALSTYAN, BAE MIN KEUN, AN JONG-HWAN, CHO JAE HYUN, LEE WON SEOK, KIM HYUN-KYU, SON HYOUNGKYU
• Format: Patent
• Language: English; Japanese
• Published: 20.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

To provide a device that processes a substrate using plasma and a substrate support unit provided to support the substrate.SOLUTION: In a substrate processing device, a substrate support unit includes a dielectric plate 220 on which a substrate W is placed, a lower electrode (RF support plate 270 and body plate 230) with a first diameter, which is placed beneath the dielectric plate, a power supply load 275 with a second diameter, which applies RF power to the lower electrode, and a grounding member 290 which is arranged below the lower electrode by being separated from the lower electrode by an insulating member at a first interval, and includes a plate portion 291 on which a through hole having a third diameter through which the power supply load penetrates is formed in the center.SELECTED DRAWING: Figure 3 【課題】プラズマを利用して基板を処理する装置及びこれに提供されて基板を支持する基板支持ユニットを提供する。【解決手段】基板処理装置において、基板支持ユニットは、基板Ｗが置かれる誘電プレート２２０と、誘電プレートの下に配置されて第１直径を有する下部電極（ＲＦサポートプレート２７０及びボディープレート２３０）と、下部電極にＲＦ電力を印加して第２直径を有する電力供給ロード２７５と、下部電極の下部に下部電極と絶縁部材によって第１間隔で離隔されて配置され、中央に電力供給ロードが貫通する第３直径を有する貫通ホールが形成されたプレート部２９１を含む接地部材２９０と、を含む。【選択図】図３