RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN

• Main Authors: SOMEYA YASUO, ADEGAWA MINORU, KAIHO TAKAAKI
• Format: Patent
• Language: English; Japanese
• Published: 14.06.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

To provide a resist composition good in any of reduction property of roughness, collapse margin. and pattern film retention, and a method of forming a resist pattern using the resist composition.SOLUTION: A resist composition includes: a compound represented by a general formula (d1-1), or a general formula (d1-2); and a polymer compound (A01) having a constitutional unit (a01) represented by a general formula (a0-1), a constitutional unit (a02) represented by a general formula (a0-2), and a constitutional unit (a03) represented by a general formula (a0-3). In formula (a0-1)-(a0-3), Ra01 is a lactone-containing cyclic group having a cyano group and the like. Xaa0 together with Yaa0, and Xab0 together with Yab0 are monocyclic alicyclic hydrocarbon group-forming groups.SELECTED DRAWING: None 【課題】ラフネスの低減性、倒れマージン、及び、パターン残膜がいずれも良好なレジスト組成物、及び当該レジスト組成物を用いたレジストパターン形成方法の提供。【解決手段】一般式（ｄ１－１）で表される化合物、又は一般式（ｄ１－２）で表される化合物と、一般式（ａ０－１）で表される構成単位（ａ０１）、一般式（ａ０－２）で表される構成単位（ａ０２）、及び一般式（ａ０－３）で表される構成単位（ａ０３）を有する高分子化合物（Ａ０１）とを含有する、レジスト組成物。式（ａ０－１）～（ａ０－３）中、Ｒａ０１は、シアノ基等を有するラクトン含有環式基である。Ｘａａ０は、Ｙａａ０と共に、Ｘａｂ０は、Ｙａｂ０と共に単環の脂環式炭化水素基を形成する基である。［化１］TIFF2022088041000088.tif43170【選択図】なし