ATOMIC LAYER DEPOSITION DEVICE AND ATOMIC LAYER DEPOSITION METHOD

• Main Authors: MOTODA SOICHIRO, ABE AYAKA, KAMEDA NAOTO, SHINO TATSUNORI, HAGIWARA TAKAYUKI
• Format: Patent
• Language: English; Japanese
• Published: 13.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technique that contributes to improvement in film formation efficiency and film formation accuracy in ALD.SOLUTION: A gas supply unit 4 for supplying gas into a chamber 3 capable of freely storing an object to be film-formed is assumed to have a raw gas supply line L2 for supplying raw material gas into a chamber 3, an ozone gas supply line L1 for supplying ozone gas of 80 vol.% or more into the chamber 3, and an inert gas supply line L3 for supplying inert gas into the chamber 3. The ozone gas supply line L1 includes: an ozone gas buffer unit L12 that stores and freely seals the ozone gas in the ozone gas supply line L1 by opening and closing an opening/closing valve V1 provided in the ozone gas supply line L1 and freely supplies the stored ozone gas in the chamber 3; and an ozone gas buffer unit pressure gauge PL1 for measuring gas pressure in the ozone gas buffer unit L12.SELECTED DRAWING: Figure 1 【課題】ＡＬＤにおいて成膜効率や成膜精度の改善に貢献する技術を提供する。【解決手段】被成膜対象物を出し入れ自在に収容可能なチャンバ３内にガスを供給するガス供給部４において、原料ガスをチャンバ３内に供給する原料ガス供給ラインＬ２と、８０体積％以上のオゾンガスをチャンバ３内に供給するオゾンガス供給ラインＬ１と、不活性ガスをチャンバ３内に供給する不活性ガス供給ラインＬ３と、を有しているものとする。オゾンガス供給ラインＬ１は、オゾンガス供給ラインＬ１に設けられた開閉弁Ｖ１の開閉により、当該オゾンガス供給ラインＬ１内のオゾンガスを蓄積して封止自在、かつ当該蓄積したオゾンガスをチャンバ３内に供給自在なオゾンガスバッファ部Ｌ１２と、オゾンガスバッファ部Ｌ１２内のガス圧力を計測するオゾンガスバッファ部圧力計ＰL1と、を備える。【選択図】図１