SEMICONDUCTOR LASER DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR LASER DEVICE

• Main Authors: MOCHIDA ATSUNORI, HAGINO HIROYUKI
• Format: Patent
• Language: English; Japanese
• Published: 17.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

To provide a semiconductor laser device and the like capable of suppressing the emission of naturally emitted light.SOLUTION: A semiconductor laser device 1 emits laser light and includes: a semiconductor laminate 50 that has a front-side end face 50F and a rear-side end face 50R; a front protective film 1F and a rear protective film 1R each placed over the front-side end face 50F and the rear-side end face 50R of the semiconductor laminate 50 respectively; and a sidewall protective film 58 that is a dielectric film placed over the entire surface of a sidewall portion 50S of the semiconductor laminate 50 in one cross-section of semiconductor laminate 50, perpendicular to the resonance direction of the laser beam.SELECTED DRAWING: Figure 2 【課題】自然放出光の出射を抑制できる半導体レーザ素子等を提供する。【解決手段】半導体レーザ素子１は、レーザ光を出射する半導体レーザ素子１であって、フロント側端面５０Ｆ及びリア側端面５０Ｒを有する半導体積層体５０と、半導体積層体５０のフロント側端面５０Ｆ、及びリア側端面５０Ｒにそれぞれ配置されるフロント保護膜１Ｆ、及びリア保護膜１Ｒと、半導体積層体５０の、レーザ光の共振方向に垂直な一つの断面において、半導体積層体５０の側壁部５０Ｓ全面に配置される誘電体膜である側壁保護膜５８と、を備える。【選択図】図２