CRYSTALLINE OXIDE FILM, STRUCTURE INCLUDING THE SAME AND METHOD FOR MANUFACTURING CRYSTALLINE OXIDE FILM

• Main Authors: IKEDA MAKOTO, YOSHIDA KAZUMA, YAGYU SHINGO, IGAWA TAKUTO
• Format: Patent
• Language: English; Japanese
• Published: 17.05.2022
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

To provide a perovskite type oxide thin film having high conductivity and including doped rare earth metal.SOLUTION: A crystalline oxide film including an oxide obtained by doping a rare earth element in a perovskite type oxide represented by a composition formula AXBYO3 (where, A and B represent different metal elements; X is 0.95≤X≤1.05; and Y is 0.60≤Y≤1.05.) has 0.25 degree or less of a rocking curve half value width measured on a (004) plane by an X-ray diffraction method. Preferably, A in the composition formula is a group 2 element, especially Sr, and B is a group 14 element, especially, Sn.SELECTED DRAWING: Figure 1 【課題】導電性が高い、希土類金属をドープしたペロブスカイト型酸化物薄膜を提供すること。【解決手段】組成式ＡＸＢＹＯ３（式中、Ａ及びＢは互いに異なる金属元素を表し、Ｘは０．９５≦Ｘ≦１．０５であり、Ｙは０．６０≦Ｙ≦１．０５である。）で表されるペロブスカイト型酸化物に希土類元素がドープされてなる酸化物を含む結晶性酸化物膜である。この結晶性酸化物膜は、（００４）面に対して測定されたＸ線回折法のロッキングカーブ半値幅が０．２５度以下である。前記組成式におけるＡが第２族元素、特にＳｒであり、Ｂが第１４族元素、特にＳｎであることが好適である。【選択図】図１