SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Author: KAGEYAMA SATOSHI
• Format: Patent
• Language: English; Japanese
• Published: 17.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To simplify a step of manufacturing a semiconductor device.SOLUTION: A semiconductor device has an organic film 40 that is formed with a through hole 43 penetrating in a z direction and has electric insulation properties, a conductive layer 31 that is formed on the organic film 40 and is formed of a Cu-based alloy containing no Ti, a Cu wiring layer 32 formed on the conductive layer 31, a semiconductor element 20 mounted on the Cu wiring layer 32, a sealing resin 50 sealing the semiconductor element 20, and an external terminal 60 connected to the conductive layer 31. The conductive layer 31 has an exposure conductive part 31a exposed from the through hole 43 of the organic film 40. The external terminal 60 is brought into contact with the exposure conductive part 31a.SELECTED DRAWING: Figure 3 【課題】半導体装置の製造工程を簡素化すること。【解決手段】半導体装置は、ｚ方向に貫通した貫通孔４３が形成された電気絶縁性を有する有機膜４０と、有機膜４０上に形成されており、Ｔｉを含まないＣｕ系の合金から形成された導電層３１と、導電層３１上に形成されたＣｕ配線層３２と、Ｃｕ配線層３２上に実装された半導体素子２０と、半導体素子２０を封止する封止樹脂５０と、導電層３１に接続された外装端子６０と、を備えている。導電層３１は、有機膜４０の貫通孔４３から露出した露出導電部３１ａを有している。外装端子６０は、露出導電部３１ａに接している。【選択図】図３