MANUFACTURING METHOD AND MANUFACTURING APPARATUS FOR SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL INGOT

• Main Authors: TSUCHIDA SHUICHI, HOSHINO NORIHIRO, KAMATA ISAO, OKAMOTO TAKESHI, KANDA TAKAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 25.04.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a manufacturing method and a manufacturing apparatus for silicon carbide single crystal that reduce defects such as penetration dislocation, and a silicon carbide single crystal ingot.SOLUTION: A manufacturing method for silicon carbide single crystal in which a raw material gas is supplied into a reaction vessel 20 where a seed substrate 50 is arranged, and heated to a predetermined temperature comprises: a first process of controlling the temperature in the reaction vessel 20 to a first predetermined temperature to grow silicon carbide single crystal 51 on a surface of the seed substrate 50, and thus achieving pair annihilation or composition of penetration dislocation 55; and a second process of keeping the inside of the reaction vessel 20 at the first predetermined temperature after the first process, and putting a tip of the penetration dislocation close to the surface of the seed substrate 50.SELECTED DRAWING: Figure 2 【課題】貫通転位等の欠陥を減少させた炭化珪素単結晶の製造方法及び製造装置、炭化珪素単結晶インゴットの提供。【解決手段】種基板５０が配置された反応容器２０内に原料ガスを供給し、所定温度に加熱する炭化珪素単結晶の製造方法において、前記反応容器２０内の温度を第１所定温度に制御して前記種基板５０の表面に炭化珪素単結晶５１を成長させることで、貫通転位５５の対消滅、もしくは、貫通転位の合成を行う第１工程と、前記第１工程の後に、前記反応容器２０内の温度を第１所定温度の状態に維持し、前記貫通転位の先端を種基板５０の表面に近付ける第２工程とを有する。【選択図】図２